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TGA2533 ku-band power amplifier data sheet: rev a 05/19/11 - 1 of 11 - disclaimer: subject to change without notice ? 2010 triquint semiconductor, inc. connecting the digital world to the global network ? applications ? point-to-point radio ? ku-band vsat product features functional block diagram ? frequency range: 12.7 ? 15.4 ghz ? toi: 43dbm ? power: 35 dbm psat, 34 dbm p1db ? gain: 28 db ? return loss: 15 db ? nf: 6 db ? integrated power detector ? bias: vd = 6 v, id = 1.3 a, vg = -0.55 v typical ? dimensions: 3.2 x 3.0 x 0.1 mm general description bond pad configuration the triquint TGA2533 is a ku-band power amplifier. the TGA2533 operates from 12.7 to 15.4 ghz and is designed using triquint?s power phemt production process. the TGA2533 typically provides 43dbm of toi at 20dbm pout/tone, 34 dbm of output power at 1 db gai n compression, and small signal gain is 28 db. the TGA2533 is ideally suited for point-to-point ra dio and ku-band vsat ground terminal. lead-free and rohs compliant bond pad # symbol 1 rf in 2, 16 vg1 3, 15 vg2 4, 14 vg3 5,13 vd1 6,12 vd2 7,11 vd3 8 rf out 9 vref 10 vdet ordering information part no. eccn description TGA2533 3a001.b.2.c ku-band power amplifier standard order qty = 50 pieces. vg3 vg1 vg3 vg1 rf in 1 16 4 TGA2533 2 14 vd1 13 12 11 10 9 rf out 8 vd2 vd3 vdet vref vg2 3 vd1 vd2 vd3 5 6 7 vg2 15
TGA2533 ku-band power amplifier data sheet: rev a 05/19/11 - 2 of 11 - disclaimer: subject to change without notice ? 2010 triquint semiconductor, inc. connecting the digital world to the global network ? specifications absolute maximum ratings parameter rating drain voltage,vd +8 v gate voltage,vg -3 to 0 v drain current, id 2.24 a gate current, ig -11 to 90 ma power dissipation, pdiss 17.9 w rf input power, cw, 50 ,t = 25oc 27 dbm channel temperature, tch 200 o c mounting temperature (30 seconds) 260 o c storage temperature -40 to 150 o c operation of this device outside the parameter rang es given above may cause permanent damage. these are stress ratings only, and functional operation of the devic e at these conditions is not implied. recommended operating conditions parameter min typical max units vd 6 v id 1.3 a id_d rive (under rf drive) 1.7 a vg -0.55 v electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommen ded operating conditions. electrical specifications test conditions unless otherwise noted: 25oc, vd = 6 v, id = 1.3 a, vg = -0.55 v typical . parameter min typical max units operational frequency range 12.7 15.4 ghz gain 24 28 db input return loss 10 15 db output return loss 10 15 db output power @ saturation 35 dbm output power @ 1 db gain compression 32 34 dbm output toi @ pout/tone = 20 dbm 40 43 dbm gain temperature coefficient -0.033 db/c power temperature coefficient -0.005 dbm/c
TGA2533 ku-band power amplifier data sheet: rev a 05/19/11 - 3 of 11 - disclaimer: subject to change without notice ? 2010 triquint semiconductor, inc. connecting the digital world to the global network ? specifications (cont.) thermal and reliability information parameter condition rating thermal resistance, jc , measured to back of package tbase = 70 c jc = 5.76 c/w channel temperature (tch), and median lifetime (tm ) tbase = 70 c, vd = 6 v, id = 1.3 a, pdiss = 7.8 w tch = 115 c tm = 2.5 e+7 hours channel temperature (tch), and median lifetime (tm) under rf drive tbase = 70 c, vd = 6 v, id = 1.7 a, pout = 34.5 dbm, pdiss = 7.38 w tch = 113 c tm = 3.1 e+7 hours 1.e+04 1.e+05 1.e+06 1.e+07 1.e+08 1.e+09 1.e+10 1.e+11 1.e+12 1.e+13 1.e+14 25 50 75 100 125 150 175 200 median lifetime, tm, (hours) channel temperature, tch, (c) median lifetime (tm) vs. channel temperature (tch) fet3
TGA2533 ku-band power amplifier data sheet: rev a 05/19/11 - 4 of 11 - disclaimer: subject to change without notice ? 2010 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance -20 -15 -10 -5 0 5 10 15 20 25 30 20 21 22 23 24 25 26 27 28 29 30 12 12.5 13 13.5 14 14.5 15 15.5 16 return loss (db) gain (db) frequency (ghz) s-parameters vs. frequency vd = 6 v, id = 1.3 a, vg = -0.55 v typical, +25 0 c gain irl orl -20 -15 -10 -5 0 5 10 15 20 25 30 10 12 14 16 18 20 22 24 26 28 30 10 11 12 13 14 15 16 17 18 19 20 return loss (db) gain (db) frequency (ghz) s-parameters vs. frequency vd = 6 v, id = 1.3 a, vg = -0.55 v typical, +25 0 c gain irl orl 26 27 28 29 30 31 32 33 34 35 36 12 12.5 13 13.5 14 14.5 15 15.5 16 output power (dbm) frequency (ghz) power vs. frequency vd = 6 v, id = 1.3 a, vg = -0.55 v typical, +25 0 c psat p1db 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 16 18 20 22 24 26 28 30 32 34 36 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 id (a) power (dbm) gain (db) input power (dbm) power, gain, id vs. input power @ 14 ghz vd = 6 v, id = 1.3 a, vg = -0.55 v typical, +25 0 c power gain id 0.01 0.1 1 10 -5 0 5 10 15 20 25 30 35 vdiff (v) output power (dbm) power detector vs. pout vs. frequency vd = 6 v, id = 1.3 a, vg = -0.55 v typical, +25 0 c 12.7ghz 13.3ghz 14.4ghz 15.4ghz 38 39 40 41 42 43 44 45 12 12.5 13 13.5 14 14.5 15 15.5 16 output toi (dbm) frequency (ghz) toi vs. frequency vs. pout/tone vd = 6 v, id = 1.3 a, vg = -0.55 v typical, +25 0 c pout/tone = 21 dbm pout/tone = 20 dbm pout/tone = 19dbm
TGA2533 ku-band power amplifier data sheet: rev a 05/19/11 - 5 of 11 - disclaimer: subject to change without notice ? 2010 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance (cont.) -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 14 16 18 20 22 24 26 28 im3 (dbc) pout/tone (dbm) im3 vs. pout/tone vs. frequency vd = 6 v, id = 1.3 a, vg = -0.55 v typical, +25 0 c 12.7ghz 13.3ghz 14.4ghz 15.4ghz -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 14 16 18 20 22 24 26 28 im5 (dbc) pout/tone (dbm) im5 vs. pout/tone vs. frequency vd = 6 v, id = 1.3 a, vg = -0.55 v typical, +25 0 c 12.7ghz 13.3ghz 14.4ghz 15.4ghz 25 26 27 28 29 30 12 12.5 13 13.5 14 14.5 15 15.5 16 gain db frequency (ghz) gain vs. frequency vs. id vd = 6 v, id = 1.1 - 1.3 a, +25 0 c 6v 1.3a 6v 1.2a 6v 1.1a 26 27 28 29 30 31 32 33 34 35 36 12 12.5 13 13.5 14 14.5 15 15.5 16 psat (dbm) frequency (ghz) saturated power vs. frequency vs. id vd = 6 v, id = 1.1 - 1.3 a, +25 0 c 6v 1.3a 6v 1.2a 6v 1.1a 38 39 40 41 42 43 44 45 12 12.5 13 13.5 14 14.5 15 15.5 16 otoi @ 20dbm pout/tone (dbm) frequency (ghz) toi vs. frequency vs. id vd = 6 v, id = 1.1 - 1.3 a, +25 0 c 6v 1.3a 6v 1.2a 6v 1.1a
TGA2533 ku-band power amplifier data sheet: rev a 05/19/11 - 6 of 11 - disclaimer: subject to change without notice ? 2010 triquint semiconductor, inc. connecting the digital world to the global network ? application circuit vg can be biased from either side (pins 2,3,4 or pi ns 14,15,16), and the non-biased side can be left o pen. vd must be biased from both sides (pins 5, 6, 7 and pins 11,12,13). bias - up procedure bias - down procedure vg set to -1.5 v turn off rf supply vd set to +6 v reduce vg to -1.5v. ensure id ~ 0 ma adjust vg more positive until quiescent id is 1.3a. this will be ~ vg = -0.55 v turn vd to 0 v apply rf signal to rf input turn vg to 0 v rf in 1 16 4 TGA2533 2 14 13 12 11 10 9 rf out 8 3 5 6 7 15 100 pf c2 100 pf c3 100 pf c4 c9 r4 r5 + _ 6 v vdiff vdet vref 100 pf c1 100 pf c5 c10 c7 0.01 f c6 0.01 f 1 f c8 1 f 1 f r1 10ohms 100kohms 100kohms r2 10 ohms r3 10 ohms vg = -0.55 v typical vd = 6 v id = 1.3 a
TGA2533 ku-band power amplifier data sheet: rev a 05/19/11 - 7 of 11 - disclaimer: subject to change without notice ? 2010 triquint semiconductor, inc. connecting the digital world to the global network ? bond pad description bond pad symbol description 1 rf in input, matched to 50 ohms. 2,16 vg1 gate voltage for 1 st stage. see note 1. 3,15 vg2 gate voltage for 2 nd stage. see note 1. 4,14 vg3 gate voltage for 3 rd stage. see note 1. 5,13 vd1 drain voltage for 1 st stage. see note 2. 6,12 vd2 drain voltage for 2 nd stage. see note 2. 7,11 vd3 drain voltage for 3 rd stage. see note 2. 8 rf out output, matched to 50 ohms 9 vdet detector diode output voltage. varies with rf outp ut power. 10 vref reference diode output voltage. gnd backside of die. notes: 1. esd protection included; bias network is required; can be biased from either side (pins 2,3,4 or pins 14,15,16), and non-biased side can be left opened; see application circuit on page 6 as an example . 2. bias network is required; must be biased from both sides; see application circuit on page 6 as an exam ple. 3 2 1 5 4 6 7 8 12 15 16 14 13 11 10 9
TGA2533 ku-band power amplifier data sheet: rev a 05/19/11 - 8 of 11 - disclaimer: subject to change without notice ? 2010 triquint semiconductor, inc. connecting the digital world to the global network ? assembly drawing bill of material ref des value description manufacturer part number c1, c2, c3, c4, c5 100 pf cap, 50v, 25%, single layer cap various c6, c7 0.01 uf cap, 50v, 10%, smd various c8, c9, c10 1 uf cap, 50v, 5% various r1, r2, r3 10 ohms res, 1/4w, 5% various
TGA2533 ku-band power amplifier data sheet: rev a 05/19/11 - 9 of 11 - disclaimer: subject to change without notice ? 2010 triquint semiconductor, inc. connecting the digital world to the global network ? mechanical information unit: millimeters thickness: 0.10 die x, y size tolerance: +/- 0.050 chip edge to bond pad dimensions are shown to cente r of pad ground is backside of die 0 0.108 0.245 0.395 1.208 1.368 2.747 3.200 3.092 2.952 0 0.108 3.089 1.208 1.368 0.245 0.395 2.747 2.892 0.108 3.000 1 2 3 4 6 5 7 8 161514 13 12 11 10 9 1.175 1.825 bond pad symbol pad size 1 rf in 0.100 x 0.200 2,16 vg1 0.100 x 0.100 3,15 vg2 0.100 x 0.100 4,14 vg3 0.100 x 0.100 5,13 vd1 0.100 x 0.100 6,12 vd2 0.100 x 0.100 7,11 vd3 0.100 x 0.200 8 rf out 0.100 x 0.200 9 vdet 0.100 x 0.100 10 vref 0.100 x 0.100
TGA2533 ku-band power amplifier data sheet: rev a 05/19/11 - 10 of 11 - disclaimer: subject to change without notice ? 2010 triquint semiconductor, inc. connecting the digital world to the global network ? product compliance information esd information esd rating: class 0 value: < 250v test: human body model (hbm) standard: jedec standard jesd22-a114 solderability this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazar dous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp-a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free eccn us department of commerce 3a001.b.2.c assembly notes component placement and adhesive attachment assembl y notes: ? vacuum pencils and/or vacuum collets are the prefer red method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment (i.e. epoxy) can be used in low- power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. reflow process assembly notes: ? use ausn (80/20) solder and limit exposure to tempe ratures above 300 c to 3-4 minutes, maximum. ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? do not use any kind of flux. ? coefficient of thermal expansion matching is critic al for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere . interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconn ect technique. ? force, time, and ultrasonics are critical parameter s. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007-inch wire.
TGA2533 ku-band power amplifier data sheet: rev a 05/19/11 - 11 of 11 - disclaimer: subject to change without notice ? 2010 triquint semiconductor, inc. connecting the digital world to the global network ? contact information for the latest specifications, additional product i nformation, worldwide sales and distribution locati ons, and information about triquint: web: www.triquint.com tel: +1.972.994.8465 email: info-sales@tqs.com fax: +1.972.994.8504 for technical questions and application information : email: info-networks@tqs.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding t he information contained herein. triquint assumes no responsibility or liab ility whatsoever for any of the information contain ed herein. triquint assumes no responsibility or liability whatsoever f or the use of the information contained herein. th e information contained herein is provided "as is, where is" and with all f aults, and the entire risk associated with such inf ormation is entirely with the user. all information contained herein is subj ect to change without notice. customers should obt ain and verify the latest relevant information before placing orders for triq uint products. the information contained herein or any use of such information does not grant, explicitly or implicitl y, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information its elf or anything described by such information. triquint products are not warranted or authorized f or use as critical components in medical, life-savi ng, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe perso nal injury or death. copyright ? 2010 triquint semiconductor, inc. all r ights reserved.

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